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14 July 2015 Femtosecond laser-induced pre-damage dynamics in Al2O3/SiO2 mirror
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UV femtosecond laser pulse was used to excite the ultrafast carrier dynamics inside the Al2O3/SiO2 high reflective mirror. Spectral shift between two different laser induced free electron absorption bands was observed. The former one centered at 406 nm undergo a fast decay of ~2.6 ps and a longer one of ~15 ps. Accompanied by the fast decay of the first absorption band, a new absorption band centered at 396 nm grew around ~2.8 ps after the laser excitation. The probable explanation the observed spectral shift of the free electron absorption band is that, the free carrier in the Al3O2 conductive band was trapped into some kind of defect state, which has an absorption peak at 396 nm, at a time scale of ~2.8 ps. Since the defect state has much longer lifetime than the initial generated free carriers in thee conductive band, probably under the condition of ultrafast high-frequency pulsed UV laser exposure, the incubation effect will decrease the laser damage threshold of the subsequent laser pulses.
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Juan Du, Zehan Li, Bing Xue, Takayoshi Kobayashi, Dongjia Han, Yuanan Zhao, and Yuxin Leng "Femtosecond laser-induced pre-damage dynamics in Al2O3/SiO2 mirror", Proc. SPIE 9532, Pacific Rim Laser Damage 2015: Optical Materials for High-Power Lasers, 953209 (14 July 2015);


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