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5 October 2015 Spin relaxation and intervalley scattering in 2D semiconductors (Presentation Recording)
Aubrey Hanbicki, Marc Currie, George Kioseoglou, C. Stephen Hellberg, Kathleen M. McCreary, Adam L. Friedman, Berend T. Jonker
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Proceedings Volume 9551, Spintronics VIII; 95510Z (2015) https://doi.org/10.1117/12.2190196
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States
Abstract
Monolayer transition metal dichalcogenides, MX2 (M = Mo, W and X = S, Se), are direct-gap semiconductors with some interesting properties. First, the low-dimensional hexagonal structure leads to two inequivalent K-points, K and K’, in the brillioun zone. Second, this valley index and spin are intrinsically coupled, and spin-dependent selection rules enable one to independently populate and interrogate a unique K valley with circularly polarized light. Here we probe the degree of circular polarization of the emitted photoluminescence as function of the photo-excitation energy and temperature to elucidate spin-dependent inter- and intra-valley relaxation mechanisms. Monolayer flakes of MoS2 and MoSe2 show a strong depolarization as the excitation energy is increased. However, WS2 maintains significant polarization for high excitation energies, even at room temperature when properly prepared. We discuss the behavior of the polarization in terms of various phonon assisted intervalley scattering processes. This work was supported by NRL and the NRL Nanoscience Institute
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Aubrey Hanbicki, Marc Currie, George Kioseoglou, C. Stephen Hellberg, Kathleen M. McCreary, Adam L. Friedman, and Berend T. Jonker "Spin relaxation and intervalley scattering in 2D semiconductors (Presentation Recording)", Proc. SPIE 9551, Spintronics VIII, 95510Z (5 October 2015); https://doi.org/10.1117/12.2190196
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KEYWORDS
Polarization
Scattering
Semiconductors
Luminescence
Molybdenum
Phonons
Selenium
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