Translator Disclaimer
Paper
26 August 2015 On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures
Author Affiliations +
Abstract
We report on the growth of GaAs-AlGaAs core-multishell nanowire quantum heterostructures by metalorganic vapor phase epitaxy, and their photoluminescence (PL) properties. Dense arrays of vertically-aligned GaAs nanowires were fabricated onto (111)B-GaAs wafers by Au-catalyzed self-assembly, and radially overgrown by two AlGaAs shells between which a few-nm thin GaAs shell was introduced to form a quantum well tube (QWT). Besides the GaAs nanowire core emission band peaked at around 1.503 eV, 7K PL spectra showed an additional broad peak in the 1.556- 1.583 eV energy interval, ascribed to the transition between electron and hole confined states within the QWT. The emission blue-shifts with the shrinkage of as-grown GaAs well tubes, as the nanowire local (on the substrate) density and height change.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paola Prete, Roberta Rosato, Elena Stevanato, Fabio Marzo, and Nico Lovergine "On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures", Proc. SPIE 9553, Low-Dimensional Materials and Devices, 955306 (26 August 2015); https://doi.org/10.1117/12.2189086
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top