On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures

Paola Prete; Roberta Rosato; Elena Stevanato; Fabio Marzo; Nico Lovergine

doi:10.1117/12.2189086

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26 August 2015 On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures

Paola Prete, Roberta Rosato, Elena Stevanato, Fabio Marzo, Nico Lovergine

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Proceedings Volume 9553, Low-Dimensional Materials and Devices; 955306 (2015) https://doi.org/10.1117/12.2189086
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States

Abstract

We report on the growth of GaAs-AlGaAs core-multishell nanowire quantum heterostructures by metalorganic vapor phase epitaxy, and their photoluminescence (PL) properties. Dense arrays of vertically-aligned GaAs nanowires were fabricated onto (111)B-GaAs wafers by Au-catalyzed self-assembly, and radially overgrown by two AlGaAs shells between which a few-nm thin GaAs shell was introduced to form a quantum well tube (QWT). Besides the GaAs nanowire core emission band peaked at around 1.503 eV, 7K PL spectra showed an additional broad peak in the 1.556- 1.583 eV energy interval, ascribed to the transition between electron and hole confined states within the QWT. The emission blue-shifts with the shrinkage of as-grown GaAs well tubes, as the nanowire local (on the substrate) density and height change.

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Paola Prete, Roberta Rosato, Elena Stevanato, Fabio Marzo, and Nico Lovergine "On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures", Proc. SPIE 9553, Low-Dimensional Materials and Devices, 955306 (26 August 2015); https://doi.org/10.1117/12.2189086

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