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The majority of modern infrared photon imaging devices are based on epitaxially grown bulk
semiconductor materials. Colloidal quantum dot (CQD)-based infrared devices provide great
promise for significantly reducing cost as well as significantly increased operating temperatures
of infrared imaging systems. In addition, CQD-based infrared devices greatly benefit from band
gap tuning by controlling the CQD size rather than the composition. In this work, we investigate
the absorption coefficient of HgTe CQD films as a function of temperature and cutoff
wavelength. The optical absorption properties are predicted for defect-free HgTe films as well
as films which vary from ideal.
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R. E. Pimpinella, A. Ciani, P. Guyot-Sionnest, C. Grein, "HgTe colloidal quantum dot LWIR infrared photodetectors," Proc. SPIE 9553, Low-Dimensional Materials and Devices, 95530K (26 August 2015); https://doi.org/10.1117/12.2188333