Organic thin films based on composite materials of semiconducting dibenzo-tetrathiafulvalene (DB-TTF) and insulating styrenic matrices (Polystyrene (PS10k) and Poly-alpha methylstyrene (PAMS10k) ) have been fabricated by the wire-bar coating technique in ambient conditions (air, light, humidity) and contrasted with the ones prepared by thermally evaporating the organic semiconductor. The transistors fabricated with DB-TTF:PS10k composites show a clear fieldeffect behavior with p-type characteristics, exhibiting charge carriers mobilities in the range of 0.01 cm2/Vs, fully comparable with the films obtained by thermal evaporation. However, while the thermally evaporated films show poor stability in air, the wire-bar coated composites films and devices are highly reproducible and exhibit lower threshold voltage values. Thus, we demonstrate the suitability of the wire-bar technique for manufacturing large area devices.
|