Thiophene-based monolayer OFETs prepared by Langmuir techniques

Elena V. Agina; Alexey S. Sizov; Daniil S. Anisimov; Askold A. Trul; Oleg V. Borshchev; Dmitry Yu. Paraschuk; Maxim A. Shcherbina; Sergey N. Chvalun; Sergey A. Ponomarenko

doi:10.1117/12.2188338

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31 August 2015 Thiophene-based monolayer OFETs prepared by Langmuir techniques

Elena V. Agina, Alexey S. Sizov, Daniil S. Anisimov, Askold A. Trul, Oleg V. Borshchev, Dmitry Yu. Paraschuk, Maxim A. Shcherbina, Sergey N. Chvalun, Sergey A. Ponomarenko

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Proceedings Volume 9568, Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII; 95680Z (2015) https://doi.org/10.1117/12.2188338
Event: SPIE Organic Photonics + Electronics, 2015, San Diego, California, United States

Abstract

A novel fast, easily processible and highly reproducible approach to thiophene-based monolayer OFETs fabrication by Langmuir-Blodgett or Langmuir-Schaefer techniques was developed and successfully applied. It is based on selfassembly of organosilicon derivatives of oligothiophenes or benzothienobenzothiophene on the water-air interface. Influence of the conjugation length and the anchor group chemistry of the self-assembling molecules on the monolayer structure and electric performance of monolayer OFETs was systematically investigated. The efficient monolayer OFETs with the charge carrier mobilities up to 0.01 cm²/Vs and on/off ratio up to 10⁶ were fabricated, and their functionality in integrated circuits under normal air conditions was demonstrated.

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Elena V. Agina, Alexey S. Sizov, Daniil S. Anisimov, Askold A. Trul, Oleg V. Borshchev, Dmitry Yu. Paraschuk, Maxim A. Shcherbina, Sergey N. Chvalun, and Sergey A. Ponomarenko "Thiophene-based monolayer OFETs prepared by Langmuir techniques", Proc. SPIE 9568, Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, 95680Z (31 August 2015); https://doi.org/10.1117/12.2188338

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