Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer

Mohammad A. Mannan; Khai V. Nguyen; Rahmi Pak; Cihan Oner; Krishna C. Mandal

doi:10.1117/12.2196582

Translator Disclaimer

4 September 2015 Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer

Mohammad A. Mannan, Khai V. Nguyen, Rahmi Pak, Cihan Oner, Krishna C. Mandal

Author Affiliations +

Proceedings Volume 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII; 95931H (2015) https://doi.org/10.1117/12.2196582
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States

Abstract

Schottky barrier radiation detectors were fabricated on the Si-face of 50 μm thick detector grade n-type 4H-SiC epitaxial layers. The junction properties of the fabricated detectors were investigated by current-voltage (I-V) and capacitancevoltage (C-V) measurements. The radiation detector performances were evaluated by alpha pulse height spectroscopy using a 0.1 μCi ²⁴¹Am radiation source. Deep level transient spectroscopy (DLTS) measurements were carried out to identify and characterize the electrically active defect levels present in the epitaxial layers. The performance of the detector was found to be limited by the presence of electrically active defect centers in the epilayer. Deep level defects were reduced significantly by isochronal annealing. Surface passivation studies were conducted on n-type 4H-SiC epilayers for use on radiation detectors for the first time. Energy resolution of the detector was found to have improved after passivation and the life time killing defects that were responsible for preventing full charge collection were reduced significantly. Systematic and thorough C-DLTS studies were conducted prior and subsequent to isochronal annealing to observe evolution of the deep level defects.

Citation Download Citation

Mohammad A. Mannan, Khai V. Nguyen, Rahmi Pak, Cihan Oner, and Krishna C. Mandal "Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer", Proc. SPIE 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII, 95931H (4 September 2015); https://doi.org/10.1117/12.2196582

ACCESS THE FULL ARTICLE