Paper
24 August 2015 Detector performance for the FIREBall-2 UV experiment
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Abstract
We present an overview of the detector for the upcoming Faint Intergalactic Red-shifted Emission Balloon (FIREBall-2) experiment, with a particular focus on the development of device-integrated optical coatings and detector quantum efficiency (QE). FIREBall-2 is designed to measure emission from the strong resonance lines of HI, OVI, and CIV, all red-shifted to 195-225 nm window; its detector is a delta-doped electron multiplying charge coupled device (EM-CCD). Delta-doped arrays, invented at JPL, achieve 100% internal QE from the UV through the visible. External losses due to reflection (~70% in some UV regions) can be mitigated with antireflection coatings (ARCs). Using atomic layer deposition (ALD), thin-film optical filters are incorporated with existing detector technologies. ALD offers nanometer-scale control over film thickness and interface quality, allowing for precision growth of multilayer films. Several AR coatings, including single and multi-layer designs, were tested for FIREBall-2. QE measurements match modeled transmittance behavior remarkably well, showing improved performance in the target wavelength range. Also under development are ALD coatings to enhance QE for a variety of spectral regions throughout the UV (90-320 nm) and visible (320-1000 nm) range both for space-based imaging and spectroscopy as well as for ground-based telescopes.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
April D. Jewell, Erika T. Hamden, Hwei Ru Ong, John Hennessy, Timothy Goodsall, Charles Shapiro, Samuel Cheng, Todd Jones, Alexander Carver, Michael Hoenk, David Schiminovich, Christopher Martin, and Shouleh Nikzad "Detector performance for the FIREBall-2 UV experiment", Proc. SPIE 9601, UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XIX, 96010N (24 August 2015); https://doi.org/10.1117/12.2190167
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Cited by 5 scholarly publications.
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KEYWORDS
Sensors

Atomic layer deposition

Ultraviolet radiation

Quantum efficiency

Semiconducting wafers

Electron multiplying charge coupled devices

Silicon

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