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5 August 2015 Research of 915nm laser power beaming to monocrystal silicon solar cells
Yu Zhang, Minsun Chen, Houman Jiang, Guomin Zhao
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Proceedings Volume 9621, 2015 International Conference on Optical Instruments and Technology: Advanced Lasers and Applications; 96210I (2015) https://doi.org/10.1117/12.2193153
Event: International Conference on Optical Instruments and Technology 2015, 2015, Beijing, China
Abstract
The properties of 915nm laser power beaming to monocrystal silicon solar cells are investigated by measuring IV curves, temperature and etc. With the illumination intensity increased from 0.04W/cm2 to 0.58W/cm2, short-circuit current increases almost linearly from 0.14A to a maximum value of 3.07A. While the maximum power output peaks at a lower irradiation intensity of 0.46W/cm2, which can be also regarded as a turning point where IV curves begin to deteriorate from normal ones to oblique lines. During the period, the fill factor decreases continuously from around 74% to a stable value of 25%. To understand the experiment more clearly, theoretical analyses are conducted by virtue of Lambert W function. Based on the analyses, it can be concluded that the primary culprits influencing the cell’s output performance are the temperature and series resistance.
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Yu Zhang, Minsun Chen, Houman Jiang, and Guomin Zhao "Research of 915nm laser power beaming to monocrystal silicon solar cells", Proc. SPIE 9621, 2015 International Conference on Optical Instruments and Technology: Advanced Lasers and Applications, 96210I (5 August 2015); https://doi.org/10.1117/12.2193153
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KEYWORDS
Resistance
Silicon solar cells
Solar cells
Laser applications
Laser energy
Silicon
Temperature metrology
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