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23 September 2015 Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
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This study focuses on the atomic layer deposition (ALD) of high quality SiO2 thin films for optical application. One of the challenges for the application of dielectric ALD layers in optical coatings is the realization of low absorption and scattering losses. Furthermore the layers have to be prepared with a precise controlled thickness and repeatable optical properties. SiO2 films were deposited using tris[dimethylamino]silane (3DMAS) and oxygen plasma on Si(100)substrates, quartz and BK7 glass substrates at temperatures between 100 °C and 300 °C. Film growth rate and refractive indices of SiO2 thin films were studied as function of deposition temperature. A linear growth behavior of SiO2 ALD films is confirmed, allowing a scalability of film thickness just by counting ALD cycles. The grown films are resistant to abrasion and possess good adhesion to glass substrates. The optical losses of the films are negligible in the investigated spectral range from 250 nm to 1100 nm. An antireflective (AR) coating was prepared by atomic layer deposition using SiO2 as low refractive index material and HfO2 as high refractive index material.
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Kristin Pfeiffer, Svetlana Shestaeva, Astrid Bingel, Peter Munzert, Ulrike Schulz, Norbert Kaiser, Andreas Tünnermann, and Adriana Szeghalmi "Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material", Proc. SPIE 9627, Optical Systems Design 2015: Advances in Optical Thin Films V, 96270Q (23 September 2015);

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