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23 October 2015 The capability of lithography simulation based on MVM-SEM® system
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The 1Xnm technology node lithography is using SMO-ILT, NTD or more complex pattern. Therefore in mask defect inspection, defect verification becomes more difficult because many nuisance defects are detected in aggressive mask feature. One key Technology of mask manufacture is defect verification to use aerial image simulator or other printability simulation. AIMS™ Technology is excellent correlation for the wafer and standards tool for defect verification however it is difficult for verification over hundred numbers or more.

We reported capability of defect verification based on lithography simulation with a SEM system that architecture and software is excellent correlation for simple line and space.[1]

In this paper, we use a SEM system for the next generation combined with a lithography simulation tool for SMO-ILT, NTD and other complex pattern lithography. Furthermore we will use three dimension (3D) lithography simulation based on Multi Vision Metrology SEM system. Finally, we will confirm the performance of the 2D and 3D lithography simulation based on SEM system for a photomask verification.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shingo Yoshikawa, Nobuaki Fujii, Koichi Kanno, Hidemichi Imai, Katsuya Hayano, Hiroyuki Miyashita, Soichi Shida, Tsutomu Murakawa, Masayuki Kuribara, Jun Matsumoto, Takayuki Nakamura, Shohei Matsushita, Daisuke Hara, and Linyong Pang "The capability of lithography simulation based on MVM-SEM® system", Proc. SPIE 9635, Photomask Technology 2015, 96351X (23 October 2015);


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