Paper
9 July 2015 Analysis of a low-aspect phase defect for actinic EUVL mask blank inspection
Author Affiliations +
Abstract
A high-volume manufacturing (HVM) actinic blank inspection (ABI) prototype could detect a printable phase defect for 16 nm node at almost 100 % of the capture rate. However, although a printable phase defect where the aspect ratio was lower than 0.01 was hardly existed, it was not detected by the HVM ABI prototype. For the purpose that could detect the low-aspect phase defects, scattered light angle from the defect was analyzed. As the result of analysis, an enlargement of the illumination NA was found to enhance the signal intensity of a low-aspect phase defect without any significant influence to the noise signal. The illumination optics of the HVM ABI prototype was improved and the illumination NA was enlarged from 0.07 to nearly 0.1. It was demonstrated that the low-aspect phase defect became to be detectable by the HVM ABI prototype, and no negative influence to other defects was found.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Yamane, Tomohisa Ino, and Hiroki Miyai "Analysis of a low-aspect phase defect for actinic EUVL mask blank inspection", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580N (9 July 2015); https://doi.org/10.1117/12.2197502
Lens.org Logo
CITATIONS
Cited by 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Light scattering

Prototyping

Photomasks

Semiconducting wafers

Mirrors

Inspection

Reflectivity

RELATED CONTENT


Back to Top