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9 July 2015 Study on modeling of resist heating effect correction in EB mask writer EBM-9000
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Resist heating effect which is caused in electron beam lithography by rise in substrate temperature of a few tens or hundreds of degrees changes resist sensitivity and leads to degradation of local critical dimension uniformity (LCDU). Increasing writing pass count and reducing dose per pass is one way to avoid the resist heating effect, but it worsens writing throughput. As an alternative way, NuFlare Technology is developing a heating effect correction system which corrects CD deviation induced by resist heating effect and mitigates LCDU degradation even in high dose per pass conditions. Our developing correction model is based on a dose modulation method. Therefore, a kind of conversion equation to modify the dose corresponding to CD change by temperature rise is necessary. For this purpose, a CD variation model depending on local pattern density was introduced and its validity was confirmed by experiments and temperature simulations. And then the dose modulation rate which is a parameter to be used in the heating effect correction system was defined as ideally irrelevant to the local pattern density, and the actual values were also determined with the experimental results for several resist types. The accuracy of the heating effect correction was also discussed. Even when deviations depending on the pattern density slightly remains in the dose modulation rates (i.e., not ideal in actual), the estimated residual errors in the correction are sufficiently small and acceptable for practical 2 pass writing with the constant dose modulation rates. In these results, it is demonstrated that the CD variation model is effective for the heating effect correction system.
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Haruyuki Nomura, Takashi Kamikubo, Mizuna Suganuma, Yasuo Kato, Jun Yashima, Noriaki Nakayamada, Hirohito Anze, and Munehiro Ogasawara "Study on modeling of resist heating effect correction in EB mask writer EBM-9000", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580R (9 July 2015);

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