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11 September 20154H-SiC photodiode model for DC SPICE circuit simulation
Technology, characterization and in particularly modeling of 4H-SiC photodiode have been presented in this paper. Modeling and simulation has been performed using PSPICE environment. Comparison of simulation with real results for electrical characteristic (I-V) of circular SiC photodiodes has been also presented.
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Andrzej Kociubiński, Mariusz Duk, Mateusz Korona, Krzysztof Muzyka, "4H-SiC photodiode model for DC SPICE circuit simulation," Proc. SPIE 9662, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015, 96620V (11 September 2015); https://doi.org/10.1117/12.2205737