4H-SiC photodiode model for DC SPICE circuit simulation

Andrzej Kociubiński; Mariusz Duk; Mateusz Korona; Krzysztof Muzyka

doi:10.1117/12.2205737

Translator Disclaimer

11 September 2015 4H-SiC photodiode model for DC SPICE circuit simulation

Andrzej Kociubiński, Mariusz Duk, Mateusz Korona, Krzysztof Muzyka

Author Affiliations +

Proceedings Volume 9662, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015; 96620V (2015) https://doi.org/10.1117/12.2205737
Event: XXXVI Symposium on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments (Wilga 2015), 2015, Wilga, Poland

Abstract

Technology, characterization and in particularly modeling of 4H-SiC photodiode have been presented in this paper. Modeling and simulation has been performed using PSPICE environment. Comparison of simulation with real results for electrical characteristic (I-V) of circular SiC photodiodes has been also presented.

Citation Download Citation

Andrzej Kociubiński, Mariusz Duk, Mateusz Korona, and Krzysztof Muzyka "4H-SiC photodiode model for DC SPICE circuit simulation", Proc. SPIE 9662, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015, 96620V (11 September 2015); https://doi.org/10.1117/12.2205737

ACCESS THE FULL ARTICLE