Paper
22 December 2015 Mid-infrared silicon pillar waveguides
Author Affiliations +
Proceedings Volume 9668, Micro+Nano Materials, Devices, and Systems; 96680I (2015) https://doi.org/10.1117/12.2202397
Event: SPIE Micro+Nano Materials, Devices, and Applications, 2015, Sydney, New South Wales, Australia
Abstract
In this work silicon pillar waveguides have been proposed to exploit the entire transparent window of silicon. These geometries posses a broad and at dispersion (from 2 to 6 μm) with four zero dispersion wavelengths. We calculate supercontinuum generation spanning over two octaves (2 to >8 μm) with long wavelengths interacting weakly with the lossy substrate. These structures have higher mode confinement in the silicon - away from the substrate, which makes them substrate independent and are promising for exploring new nonlinear phenomena and highly sensitive molecular sensing over the entire silicon's transparency range
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Neetesh Singh, Darren D. Hudson, and Benjamin J. Eggleton "Mid-infrared silicon pillar waveguides", Proc. SPIE 9668, Micro+Nano Materials, Devices, and Systems, 96680I (22 December 2015); https://doi.org/10.1117/12.2202397
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KEYWORDS
Waveguides

Dispersion

Silicon

Sapphire

Supercontinuum generation

Patterned sapphire substrate

Mid-IR

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