Paper
25 October 2016 High performance organic optoelectronic integrated device based on thermally activated delayed fluorescence material with an interlaid architecture
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Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 968608 (2016) https://doi.org/10.1117/12.2243402
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
A high performance organic integrated device (OID) has been realized with a thermally activated delayed fluorescence (TADF) material namely, 4,5-bis(carbazol-9-yl)-1,2-dicyanobenzene (2CzPN) and another transport material named 4,7-diphenyl-1, 10-Phenanthroline (Bphen) with an interbedded architecture as the active layer. The OID had a high detectivity of 0.8×1012 Jones at -1 V under the UV-365 nm illumination with an intensity of 0.2 mW/cm2, and yielded an exciplex EL light emission with a maximum luminance of ~12000 cd/m2. While the non-intebedded device has a detectivity of 4.1×1010 Jones and a maximum luminance of 8300 cd/m2.
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Dianli Zhou, Hanyu Wang, Jiang Huang, and Junsheng Yu "High performance organic optoelectronic integrated device based on thermally activated delayed fluorescence material with an interlaid architecture", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 968608 (25 October 2016); https://doi.org/10.1117/12.2243402
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KEYWORDS
Electrons

Organic light emitting diodes

Luminescence

Optoelectronic devices

Electroluminescence

Organic optoelectronics

Transmittance

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