Paper
25 October 2016 A room temperature terahertz photodetector based on In0.53Ga0.47As material
Yue Qu, Wei Zhou, Niangjuan Yao, Zhiming Huang
Author Affiliations +
Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 96860S (2016) https://doi.org/10.1117/12.2243863
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
A terahertz photodetector was designed based on the novel room-temperature photoconductivity theory we proposed before. Prototype detectors with different sizes of photo-active area was fabricated on In0.53Ga0.47As material. Detectors' I-V property were tested, and signal response to a 0.0375THz source were measured. Results indicated that our detectors performed outstanding responsivity and respond speed. The room-temperature responsivity was estimated to be on the order of 104 V/W, the corresponding noise equivalent power (NEP) was estimated to be on the order of 10-12 W/Hz1/2, and the response time constant was calculated to be 1.06×10-5 S. Finally, our room-temperature photoconductivity theory was confirmed to be detectors’ respond mechanism via experiment and estimation.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yue Qu, Wei Zhou, Niangjuan Yao, and Zhiming Huang "A room temperature terahertz photodetector based on In0.53Ga0.47As material", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860S (25 October 2016); https://doi.org/10.1117/12.2243863
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KEYWORDS
Sensors

Signal detection

Modulation

Terahertz radiation

Photodetectors

Sensor performance

Visible radiation

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