Paper
25 October 2016 Effects of annealing time on the application of vanadium dioxide films in smart windows
Chunhui Ji, Zhiming Wu, Xuefei Wu, Haoqian Feng, Xueting Ma, Yadong Jiang
Author Affiliations +
Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 968612 (2016) https://doi.org/10.1117/12.2242821
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China
Abstract
Vanadium dioxide (VO2) films have great potential applications in photoelectric switching, storage devices, terahertz modulators and smart windows, due to the abruptly insulator-metal phase transition (IMT) near room temperature. In this research, vanadium oxide films were deposited by DC reactive magnetron sputtering in different annealing time of 450°C on glass substrates. As for electrical properties, the increasing of annealing time turns out sheet resistance increases at first, and then decreases in insulating phase, vice versa in metallic phase. In optical properties, the visible transmittance of VO2 films initially drops with annealing time prolonging, afterwards the transmittance slightly recovers. Differences between the electrical and optical are due to the grain size. Moreover, VO2 film annealing 15 min presents excellent visible transmittance, highly near-IR modulation efficiency (about 92% at a wavelength of 1100nm) and the lowest phase transition temperature (55.7°C). This result indicates that an appropriate annealing ambient can facilitate the application of VO2 film in smart windows.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chunhui Ji, Zhiming Wu, Xuefei Wu, Haoqian Feng, Xueting Ma, and Yadong Jiang "Effects of annealing time on the application of vanadium dioxide films in smart windows", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 968612 (25 October 2016); https://doi.org/10.1117/12.2242821
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KEYWORDS
Annealing

Transmittance

Vanadium

Modulation

Sputter deposition

Resistance

Phase shift keying

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