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7 December 1988 Responsivity Of Silicon Photodiodes From 0.5 To 1.1 µm At 77 K
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Abstract
The Visual and Infrared Mapping Spectrometer (VIMS), a facility instrument for NASA's Mars Observer mission, has a spectral bandwidth of 0.35 to 5.14 μm. Detection over such a large spectral bandwidth requires the use of two different detector materials. Indium antimonide is the choice for infrared detection, and silicon for the visible/UV region. Indium antimonide's cryongenic operating temperature forces the silicon photodiodes to operate at 77 K also, since both arrays will be within the same focal plane assembly. The VIMS system analysis required quantitative responsivity data for silicon pho-todiodes at 77 K in the band from 0.5 to 1.1 pm. This paper describes the experiment used to measure and compare the responsivities of Si, Ge, and InSb photodiodes and to provide an analysis of the data. The results as applied to the VIMS predicted performance are briefly discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Staller, C Niblack, and D. Smith "Responsivity Of Silicon Photodiodes From 0.5 To 1.1 µm At 77 K", Proc. SPIE 0972, Infrared Technology XIV, (7 December 1988); https://doi.org/10.1117/12.948288
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