High-power single emitters and low fill factor bars emitting at 808 nm

A. Pietrzak; R. Hülsewede; M. Zorn; J. Meusel; J. Sebastian

doi:10.1117/12.2212709

4 March 2016 High-power single emitters and low fill factor bars emitting at 808 nm

A. Pietrzak, R. Hülsewede, M. Zorn, J. Meusel, J. Sebastian

Proceedings Volume 9733, High-Power Diode Laser Technology and Applications XIV; 97330R (2016) https://doi.org/10.1117/12.2212709
Event: SPIE LASE, 2016, San Francisco, California, United States

Abstract

Single emitters emitting at a wavelength around 808 nm are highly-desired as pump sources of low power solid state lasers. The latest development of high-power single emitters having emitter apertures of 95 μm, 100 μm and 200 μm based on TM-polarized material are presented. The devices were characterized up to their maximum optical output powers of 15 W from 100 μm wide emitters and 22 W from 200 μm wide emitters. The operation point of these devices is set to 7 W and 10 W, respectively with wall-plug efficiencies of ~55%. Furthermore first results on 5- emitters bars operating at 40 W are presented.

Citation Download Citation

A. Pietrzak, R. Hülsewede, M. Zorn, J. Meusel, and J. Sebastian "High-power single emitters and low fill factor bars emitting at 808 nm", Proc. SPIE 9733, High-Power Diode Laser Technology and Applications XIV, 97330R (4 March 2016); https://doi.org/10.1117/12.2212709

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