Translator Disclaimer
4 March 2016 High-power single emitters and low fill factor bars emitting at 808 nm
Author Affiliations +
Single emitters emitting at a wavelength around 808 nm are highly-desired as pump sources of low power solid state lasers. The latest development of high-power single emitters having emitter apertures of 95 μm, 100 μm and 200 μm based on TM-polarized material are presented. The devices were characterized up to their maximum optical output powers of 15 W from 100 μm wide emitters and 22 W from 200 μm wide emitters. The operation point of these devices is set to 7 W and 10 W, respectively with wall-plug efficiencies of ~55%. Furthermore first results on 5- emitters bars operating at 40 W are presented.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Pietrzak, R. Hülsewede, M. Zorn, J. Meusel, and J. Sebastian "High-power single emitters and low fill factor bars emitting at 808 nm", Proc. SPIE 9733, High-Power Diode Laser Technology and Applications XIV, 97330R (4 March 2016);


1180 nm GaInNAs quantum well based high power DBR laser...
Proceedings of SPIE (February 24 2017)
High power broad area 808 nm DFB lasers for pumping...
Proceedings of SPIE (February 22 2006)
Reliable high power long pulse 8XX nm diode laser bars...
Proceedings of SPIE (February 21 2011)
High power diode laser arrays emitting at 2 µm with...
Proceedings of SPIE (February 22 2006)

Back to Top