Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers

Jerome V. Moloney; Isak Kilen; Jorg Hader; Stephan W. Koch

doi:10.1117/12.2213600

Translator Disclaimer

10 March 2016 Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers

Jerome V. Moloney, Isak Kilen, Jorg Hader, Stephan W. Koch

Author Affiliations +

Proceedings Volume 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI; 97340U (2016) https://doi.org/10.1117/12.2213600
Event: SPIE LASE, 2016, San Francisco, California, United States

Abstract

Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.

Citation Download Citation

Jerome V. Moloney, Isak Kilen, Jorg Hader, and Stephan W. Koch "Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers", Proc. SPIE 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, 97340U (10 March 2016); https://doi.org/10.1117/12.2213600

ACCESS THE FULL ARTICLE