Translator Disclaimer
Paper
14 March 2016 High-efficiency bispectral laser source for EUV lithography
Author Affiliations +
Abstract
New concept of EUV radiation power scaling in the intermediate focus of the illumination system is proposed. The multiplex source scheme based on combination of several sources with acceptable level power allows to concentrate EUV light on the total power level of 1kW and more have been developed. The experimental results showed that the power consumption in the double-pulse bi-spectral primary source for EUV lithography can be substantially decrease by replacing pre-amplifiers in power CO2 laser on the SRS converters wavelength 1.06 μm to 10.6 μm while maintaining efficiency of EUV radiation output of illuminated plasma.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. P. Zhevlakov, R. P. Seisyan, V. G. Bespalov, V. V. Elizarov, A. S. Grishkanich, and S. V. Kascheev "High-efficiency bispectral laser source for EUV lithography", Proc. SPIE 9735, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXI, 97351F (14 March 2016); https://doi.org/10.1117/12.2214732
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Research of pulse CO2 laser produced tin plasma
Proceedings of SPIE (February 22 2013)
Performance of new high-power HVM LPP-EUV source
Proceedings of SPIE (March 18 2016)
Development of 250W EUV light source for HVM lithography
Proceedings of SPIE (February 22 2017)
High-efficiency bispectral laser for EUV
Proceedings of SPIE (May 12 2015)

Back to Top