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4 March 2016 Dynamic model of pulsed laser generators based on multi-junction N-p-N-i-P heterostructures
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This communication presents a dynamic model of a multi-junction heterostructure that combines the functions of a fast current switch and a high-efficiency laser emitter. Approaches to designing a multi-junction heterostructure with faster switching (rise and decay times of about 1 ns) and higher peak current (>10 A) are considered. It is shown that an important role is played in the dynamics of the injection drive currents of the laser part by the modulation by excess carriers in the lightly doped base and collector regions of the N-p-N transistor part. As a result, a field domain is formed, which serves as a virtual emitter of electrons and holes via impact ionization.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey Slipchenko, Alexsandr Podoskin, Olga Soboleva, Nikita Pikhtin, Il'ya Tarasov, and Valentin Yuferev "Dynamic model of pulsed laser generators based on multi-junction N-p-N-i-P heterostructures", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420I (4 March 2016);

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