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4 March 2016 Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials
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We describe a study of electro-absorption effects in high quality 1300nm InAs/GaAs quantum dot (QD) material grown by molecular beam epitaxy. The photocurrent spectra as a function of electric field is investigated and the quantum confined Stark shift of the QD states is compared to reports for various quantum well (QW) systems (GaAs/AlGaAs, InGaAs/GaAs, InGaAsP/InP). We show that the rate of shift of the QD absorption peak is smaller than that of the reported QW systems (~0.1 meV/kVcm-1 c.f. 0.15-0.2 meV/kVcm- 1) and that the QD ground-state absorption is comparatively insensitive to the applied electric field. We observe a strong QD absorption peak at all biases up to avalanche breakdown, which is not observed in previous reports for these QW systems.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. A. Sobhani, D. T. Childs, N. Babazadeh, B. J. Stevens, K. Nishi, M. Sugawara, K. Takemasa, and R. A. Hogg "Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials", Proc. SPIE 9742, Physics and Simulation of Optoelectronic Devices XXIV, 97420S (4 March 2016);


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