Paper
26 February 2016 Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals
T. Nakano, K. Kawakami, A. A. Yamaguchi
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Abstract
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect-density, and the assumption is not necessarily valid. In this study, we developed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. The results show that the conventional method cannot give accurate IQE values for low-quality samples although it can be valid for high-quality samples, and that our method can always give accurate values.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Nakano, K. Kawakami, and A. A. Yamaguchi "Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 97481W (26 February 2016); https://doi.org/10.1117/12.2212243
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Cited by 14 scholarly publications.
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KEYWORDS
Gallium nitride

Statistical analysis

Internal quantum efficiency

Signal processing

Signal detection

Luminescence

External quantum efficiency

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