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15 March 2016 Silicon germanium on graded buffer as a new platform for optical interconnects on silicon
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Proceedings Volume 9753, Optical Interconnects XVI; 975309 (2016)
Event: SPIE OPTO, 2016, San Francisco, California, United States
We experimentally and theoretically investigate the use of silicon germanium (SiGe) on silicon substrate as a new platform for optical interconnects. The system composed of Germanium (Ge) rich Si1-xGex guiding layer on a graded SiGe layer is showed to be suitable for the realization of all main building blocks of passive optical circuitry. We show experimentally at a wavelength of 1550nm that sharp 12μm radius bends can be obtained by light confinement tuning. Mach-Zehnder interferometer with more than 10 dB extinction ratio is also demonstrated. Moreover, Ge-rich Si1-xGex based passive components are very interesting for their native integration with Ge-rich active optical devices. Hence, by using this new platform for optical integrated circuits, lattice mismatch between silicon and germanium is no longer a major constraint for the integration of Ge-rich active photonic components on silicon.
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Vladyslav Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, Jean Rene Coudevylle, Laurent Vivien, Giovanni Isella, and Delphine Marris-Morini "Silicon germanium on graded buffer as a new platform for optical interconnects on silicon", Proc. SPIE 9753, Optical Interconnects XVI, 975309 (15 March 2016);

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