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15 March 2016 Reduced nonlinearities in 100-nm high SOI waveguides
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Proceedings Volume 9753, Optical Interconnects XVI; 975313 (2016)
Event: SPIE OPTO, 2016, San Francisco, California, United States
Here we show the results of an experimental analysis dedicated to investigate the impact of optical non linear effects, such as two-photon absorption (TPA), free-carrier absorption (FCA) and free-carrier dispersion (FCD), on the performance of integrated micro-resonator based filters for application in WDM telecommunication systems. The filters were fabricated using SOI (Silicon-on-Insulator) technology by CEA-Leti, in the frame of the FP7 Fabulous Project, which aims to develop low-cost and high-performance integrated optical devices to be used in new generation passive optical- networks (NG-PON2). Different designs were tested, including both ring-based structures and racetrack-based structures, with single-, double- or triple- resonator configuration, and using different waveguide cross-sections (from 500 x 200 nm to 825 x 100 nm). Measurements were carried out using an external cavity tunable laser source operating in the extended telecom bandwidth, using both continuous wave signals and 10 Gbit/s modulated signals. Results show that the use 100-nm high waveguide allows reducing the impact of non-linear losses, with respect to the standard waveguides, thus increasing by more than 3 dB the maximum amount of optical power that can be injected into the devices before causing significant non-linear effects. Measurements with OOK-modulated signals at 10 Gbit/s showed that TPA and FCA don’t affect the back-to-back BER of the signal, even when long pseudo-random-bit-sequences (PRBS) are used, as the FCD-induced filter-detuning increases filter losses but “prevents” excessive signal degradation.
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C. Lacava, R. Marchetti, V. Vitali, I. Cristiani, G. Giuliani, M. Fournier, S. Bernabe, and P. Minzioni "Reduced nonlinearities in 100-nm high SOI waveguides", Proc. SPIE 9753, Optical Interconnects XVI, 975313 (15 March 2016);

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