Radiation tolerance studies of long wavelength infrared InAs/GaSb detectors

Alexander Soibel; Sir B. Rafol; Arezou Khoshakhlagh; Jean Nguyen; Linda Hoglund; Anita Fisher; Sam A. Keo; David Z.-Y. Ting; Sarath D. Gunapala

doi:10.1117/12.2209187

13 February 2016 Radiation tolerance studies of long wavelength infrared InAs/GaSb detectors

Alexander Soibel, Sir B. Rafol, Arezou Khoshakhlagh, Jean Nguyen, Linda Hoglund, Anita Fisher, Sam A. Keo, David Z.-Y. Ting, Sarath D. Gunapala

Author Affiliations +

Proceedings Volume 9755, Quantum Sensing and Nano Electronics and Photonics XIII; 975511 (2016) https://doi.org/10.1117/12.2209187
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

In this work we investigated the effect of proton irradiation on the performance of long wavelength infrared (LWIR) InAs/GaSb photodiodes (λ_c = 10.2μm) based on the complementary barrier infrared detector (CBIRD) design. We found that irradiation with 68MeV protons up to the total ionizing dose TID = 200 kRad results in only small (about 15%) decrease of the Quantum Efficiency and does not increase the operational bias of the photodiodes. However, the irradiation causes a significant increase of the dark current from j_d = 5x10^-5 A/cm² at V_b = 0.1V and T = 80K to j_d = 6x10^-3 A/cm2 at TID = 200 kRad. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by the trap assisted tunneling processes in the proton displacement damage areas near the device sidewalls.

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Alexander Soibel, Sir B. Rafol, Arezou Khoshakhlagh, Jean Nguyen, Linda Hoglund, Anita Fisher, Sam A. Keo, David Z.-Y. Ting, and Sarath D. Gunapala "Radiation tolerance studies of long wavelength infrared InAs/GaSb detectors", Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 975511 (13 February 2016); https://doi.org/10.1117/12.2209187

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