Paper
4 March 2016 Controlling the parameters of wet lateral oxidation for VCSEL fabrication
Majid Riaziat, David Reed, Alex Kor
Author Affiliations +
Abstract
Physical parameters that need to be controlled during the wet oxidation of VCSEL mesas are numerous and include: temperature uniformity, vapor flow pattern, epitaxial thickness and composition uniformity, diffusion through adjacent layers, oxidation onset delay, etch skirt, and wafer surface prep. We report the results of our studies on some of these factors including vapor flow patterns, and oxidation front monitoring. The results are being used for the optimization of our commercial system for wet lateral oxidation.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Majid Riaziat, David Reed, and Alex Kor "Controlling the parameters of wet lateral oxidation for VCSEL fabrication", Proc. SPIE 9766, Vertical-Cavity Surface-Emitting Lasers XX, 97660H (4 March 2016); https://doi.org/10.1117/12.2214506
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KEYWORDS
Oxidation

Semiconducting wafers

Vertical cavity surface emitting lasers

Aluminum

Etching

Oxides

Oxygen

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