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7 March 2016 Photonic-crystal lasers on silicon for chip-scale optical interconnects
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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 976710 (2016)
Event: SPIE OPTO, 2016, San Francisco, California, United States
Optical interconnects are expected to reduce the power consumption of ICT instruments. To realize chip-to-chip or chip-scale optical interconnects, it is essential to fabricate semiconductor lasers with a smaller energy cost. In this context, we are developing lambda-scale embedded active-region photonic-crystal (LEAP) lasers as light sources for chip-scale optical interconnects. We demonstrated the first continuous-wave (CW) operation of LEAP lasers in 2012 and reported a record low threshold current and energy cost of 4.8 μA and 4.4 fJ/bit at 10 Gbit/s in 2013. We have also integrated photonic crystal photodetectors on the same InP chip and demonstrated waveform transfer along 500-μm-long waveguides. Although LEAP lasers exhibit excellent performance, they have to be integrated on Si wafers for use as light sources for chip-scale optical interconnects. In this paper, we give a brief overview of our LEAP lasers on InP and report our recent progress in fabricating them on Si. We bonded the InP wafers with quantum-well gain layers directly on thermally oxidized Si wafers and performed all process steps on the Si wafer, including high-temperature regrowth. After this process modification, we again achieved CW operation and obtained a threshold current of 57 μA with a maximum output power of more than 3.5 μW at the output waveguides. An output light was successfully guided through 500 × 250-nm InP waveguides.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koji Takeda, Takuro Fujii, Akihiko Shinya, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, and Shinji Matsuo "Photonic-crystal lasers on silicon for chip-scale optical interconnects", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 976710 (7 March 2016);


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