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10 March 2016 Quantum dots as active material for quantum cascade lasers: comparison to quantum wells
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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 97671E (2016) https://doi.org/10.1117/12.2213324
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
We review a microscopic laser theory for quantum dots as active material for quantum cascade lasers, in which carrier collisions are treated at the level of quantum kinetic equations. The computed characteristics of such a quantum-dot active material are compared to a state-of-the-art quantum-well quantum cascade laser. We find that the current requirement to achieve a comparable gain-length product is reduced compared to that of the quantum-well quantum cascade laser.
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Stephan Michael, Weng W. Chow, and Hans Christian Schneider "Quantum dots as active material for quantum cascade lasers: comparison to quantum wells", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97671E (10 March 2016); https://doi.org/10.1117/12.2213324
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