DBR tapered diode laser at 1030 nm with nearly diffraction-limited narrowband emission and 12.7 W of optical output power

André Müller; Jörg Fricke; Frank Bugge; Olaf Brox; Götz Erbert; Bernd Sumpf

doi:10.1117/12.2207454

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7 March 2016 DBR tapered diode laser at 1030 nm with nearly diffraction-limited narrowband emission and 12.7 W of optical output power

André Müller, Jörg Fricke, Frank Bugge, Olaf Brox, Götz Erbert, Bernd Sumpf

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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 97671I (2016) https://doi.org/10.1117/12.2207454
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Nearly diffraction-limited emission from a distributed Bragg reflector (DBR) tapered diode laser is presented. Intrinsic wavelength stabilization is achieved with a 3rd order DBR grating manufactured by electron beam lithography. At a heatsink temperature of 15°C an optical output power of 12.7 W with an electro-optical efficiency > 40% is obtained. The corresponding emission wavelength is 1030.57 nm and spectral bandwidths of 0.02 nm are measured over the whole power range. At 10.5 W of optical power 8.1 W are contained in the central lobe. The measured beam propagation ratio and brightness are 1.1 (1/e²) and 700 MWcm^-2 sr^-1, respectively. With these parameters, the laser is suitable for applications such as non-linear frequency conversion.

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André Müller, Jörg Fricke, Frank Bugge, Olaf Brox, Götz Erbert, and Bernd Sumpf "DBR tapered diode laser at 1030 nm with nearly diffraction-limited narrowband emission and 12.7 W of optical output power", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97671I (7 March 2016); https://doi.org/10.1117/12.2207454

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