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7 March 2016 DBR tapered diode laser at 1030 nm with nearly diffraction-limited narrowband emission and 12.7 W of optical output power
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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 97671I (2016) https://doi.org/10.1117/12.2207454
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
Nearly diffraction-limited emission from a distributed Bragg reflector (DBR) tapered diode laser is presented. Intrinsic wavelength stabilization is achieved with a 3rd order DBR grating manufactured by electron beam lithography. At a heatsink temperature of 15°C an optical output power of 12.7 W with an electro-optical efficiency > 40% is obtained. The corresponding emission wavelength is 1030.57 nm and spectral bandwidths of 0.02 nm are measured over the whole power range. At 10.5 W of optical power 8.1 W are contained in the central lobe. The measured beam propagation ratio and brightness are 1.1 (1/e2) and 700 MWcm-2 sr-1, respectively. With these parameters, the laser is suitable for applications such as non-linear frequency conversion.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
André Müller, Jörg Fricke, Frank Bugge, Olaf Brox, Götz Erbert, and Bernd Sumpf "DBR tapered diode laser at 1030 nm with nearly diffraction-limited narrowband emission and 12.7 W of optical output power", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97671I (7 March 2016); https://doi.org/10.1117/12.2207454
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