Improvement of EUV mix-match overlay for production implementation

Sarohan Park; ByoungHoon Lee; Byong-Seog Lee; Inwhan Lee; Chang-Moon Lim

doi:10.1117/12.2219169

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18 March 2016 Improvement of EUV mix-match overlay for production implementation

Sarohan Park, ByoungHoon Lee, Byong-Seog Lee, Inwhan Lee, Chang-Moon Lim

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Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 97760E (2016) https://doi.org/10.1117/12.2219169
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The improvement of overlay control in extreme ultra-violet (EUV) lithography is one of critical issues for successful mass production by using it. Especially it is important to improve the mix and match overlay or matched machine overlay (MMO) between EUV and ArF immersion tool, because EUV process will be applied to specific layers that have more competitive cost edge against ArF immersion multiple patterning with the early mass productivity of EUVL. Therefore it is necessary to consider the EUV overlay target with comparing the overlay specification of double patterning technology (DPT) and spacer patterning technology (SPT). This paper will discuss about required overlay controllability and current performance of EUV, and challenges for future improvement.

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Sarohan Park, ByoungHoon Lee, Byong-Seog Lee, Inwhan Lee, and Chang-Moon Lim "Improvement of EUV mix-match overlay for production implementation", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760E (18 March 2016); https://doi.org/10.1117/12.2219169

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