Throughput compensation through optical proximity correction for realization of an extreme-ultraviolet pellicle

Ki-Ho Ko; Soo-Yeon Mo; In-Seon Kim; Hye-Keun Oh

doi:10.1117/12.2220155

18 March 2016 Throughput compensation through optical proximity correction for realization of an extreme-ultraviolet pellicle

Ki-Ho Ko, Soo-Yeon Mo, In-Seon Kim, Hye-Keun Oh

Author Affiliations +

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 97760I (2016) https://doi.org/10.1117/12.2220155
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The absorption of extreme-ultraviolet (EUV) pellicle could be the most critical problem because the EUV source power is still not good enough for achieving mass production. We found that the transmission loss due to the EUV pellicle could be compensated through proper optical proximity correction (OPC) of a pellicled mask. Patterning results of OPCed masks with different transmission pellicles are shown for various 1D and 2D patterns. From the results, it is clearly shown that we do not need to increase the dose to avoid the throughput loss even if a pellicle which has 80 % one-pass transmission is used. Therefore, the EUV pellicle manufacturing would be much easier because we can use much thicker film with higher absorption.

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Ki-Ho Ko, Soo-Yeon Mo, In-Seon Kim, and Hye-Keun Oh "Throughput compensation through optical proximity correction for realization of an extreme-ultraviolet pellicle", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760I (18 March 2016); https://doi.org/10.1117/12.2220155

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KEYWORDS

Pellicles

Photomasks

Extreme ultraviolet

Optical proximity correction

Optical lithography

Image transmission

Critical dimension metrology

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