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18 March 2016 Energy effective dual-pulse bispectral laser for EUV lithography
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The power consumption in the two-pulse bispectral primary source could be substantially decreased by replacing the SRS converters from 1.06 μm into 10.6 μm wavelength as the preamplifier cascades in СО2 laser channel at the same efficiency radiation of EUV source. The creation of high volume manufacturing lithography facilities with the technological standard of 10-20 nm is related to the implementation of resist exposure modes with pulse repetition rate of 100 kHz. Low power consumption of the proposed scheme makes it promising for the creation of LPP EUV sources.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. P. Zhevlakov, R. P. Seisyan, V. G. Bespalov, V. V. Elizarov, A. S. Grishkanich, S. V. Kascheev, and I. S. Sidorov "Energy effective dual-pulse bispectral laser for EUV lithography", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760Q (18 March 2016);


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