Defectivity and particle reduction for mask life extension, and imprint mask replication for high-volume semiconductor manufacturing

Keiji Emoto; Fumio Sakai; Chiaki Sato; Yukio Takabayashi; Hitoshi Nakano; Tsuneo Takabayashi; Kiyohito Yamamoto; Tadashi Hattori; Mitsuru Hiura; Toshiaki Ando; Yoshio Kawanobe; Hisanobu Azuma; Takehiko Iwanaga; Jin Choi; Ali Aghili; Chris Jones; J. W. Irving; Brian Fletcher; Zhengmao Ye

doi:10.1117/12.2219036

22 March 2016 Defectivity and particle reduction for mask life extension, and imprint mask replication for high-volume semiconductor manufacturing

Keiji Emoto, Fumio Sakai, Chiaki Sato, Yukio Takabayashi, Hitoshi Nakano, Tsuneo Takabayashi, Kiyohito Yamamoto, Tadashi Hattori, Mitsuru Hiura, Toshiaki Ando, Yoshio Kawanobe, Hisanobu Azuma, Takehiko Iwanaga, Jin Choi, Ali Aghili, Chris Jones, J. W. Irving, Brian Fletcher, Zhengmao Ye

Author Affiliations +

Proceedings Volume 9777, Alternative Lithographic Technologies VIII; 97770C (2016) https://doi.org/10.1117/12.2219036
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. Criteria specific to any lithographic process for the semiconductor industry include overlay, throughput and defectivity. The purpose of this paper is to describe the technology advancements made in the reduction of particle adders in an imprint tool and introduce the new mask replication tool that will enable the fabrication of replica masks with added residual image placement errors suitable for memory devices with half pitches smaller than 15nm. Hard particles on a wafer or mask create the possibility of creating a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, test stand results demonstrate the potential for extending mask life to better than 1000 wafers. Additionally, a new replication tool, the FPA-1100 NR2 is introduced. Mask chuck flatness simulation results were also performed and demonstrate that residual image placement errors can be reduced to as little as 1nm.

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Keiji Emoto, Fumio Sakai, Chiaki Sato, Yukio Takabayashi, Hitoshi Nakano, Tsuneo Takabayashi, Kiyohito Yamamoto, Tadashi Hattori, Mitsuru Hiura, Toshiaki Ando, Yoshio Kawanobe, Hisanobu Azuma, Takehiko Iwanaga, Jin Choi, Ali Aghili, Chris Jones, J. W. Irving, Brian Fletcher, and Zhengmao Ye "Defectivity and particle reduction for mask life extension, and imprint mask replication for high-volume semiconductor manufacturing", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97770C (22 March 2016); https://doi.org/10.1117/12.2219036

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