Pattern fidelity improvement of chemo-epitaxy DSA process for high-volume manufacturing

Makoto Muramatsu; Takanori Nishi; Gen You; Yusuke Saito; Yasuyuki Ido; Kiyohito Ito; Toshikatsu Tobana; Masanori Hosoya; Weichien Chen; Satoru Nakamura; Mark Somervell; Takahiro Kitano

doi:10.1117/12.2218595

22 March 2016 Pattern fidelity improvement of chemo-epitaxy DSA process for high-volume manufacturing

Makoto Muramatsu, Takanori Nishi, Gen You, Yusuke Saito, Yasuyuki Ido, Kiyohito Ito, Toshikatsu Tobana, Masanori Hosoya, Weichien Chen, Satoru Nakamura, Mark Somervell, Takahiro Kitano

Author Affiliations +

Proceedings Volume 9777, Alternative Lithographic Technologies VIII; 97770F (2016) https://doi.org/10.1117/12.2218595
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Directed self-assembly (DSA) is one of the candidates for next generation lithography. Over the past few years, cylindrical and lamellar structures dictated by the block co-polymer (BCP) composition have been investigated for use in patterning contact holes or lines, and, Tokyo Electron Limited (TEL is a registered trademark or a trademark of Tokyo Electron Limited in Japan and /or other countries.) has presented the evaluation results and the advantages of each-^1-5. In this report, we will present the latest results regarding the defect reduction work on a model line/space system. Especially it is suggested that the defectivity of the neutral layer has a large impact on the defectivity of the DSA patterns. Also, LER/LWR reduction results will be presented with a focus on the improvements made during the etch transferring the DSA patterns into the underlayer.

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Makoto Muramatsu, Takanori Nishi, Gen You, Yusuke Saito, Yasuyuki Ido, Kiyohito Ito, Toshikatsu Tobana, Masanori Hosoya, Weichien Chen, Satoru Nakamura, Mark Somervell, and Takahiro Kitano "Pattern fidelity improvement of chemo-epitaxy DSA process for high-volume manufacturing", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97770F (22 March 2016); https://doi.org/10.1117/12.2218595

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