Improvements to the analytical linescan model for SEM metrology

Chris A. Mack; Benjamin D. Bunday

doi:10.1117/12.2218443

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18 March 2016 Improvements to the analytical linescan model for SEM metrology

Chris A. Mack, Benjamin D. Bunday

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Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 97780A (2016) https://doi.org/10.1117/12.2218443
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Critical dimension scanning electron microscope (CD-SEM) metrology has long used empirical approaches to determine edge locations. While such solutions are very flexible, physics-based models offer the potential for improved accuracy and precision for specific applications. Here, Monte Carlo simulation is used to generate theoretical linescans from single step and line/space targets in order to build a physics-based analytical model, including the presence of bottom footing and top corner rounding. The resulting analytical linescan model fits the Monte Carlo simulation results for different feature heights, widths, pitches, sidewall angles, bottom footing, and top corner rounding. This model has also been successfully applied to asymetric features such as sidewall spacers encountered in self-aligned double patterning.

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Chris A. Mack and Benjamin D. Bunday "Improvements to the analytical linescan model for SEM metrology", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780A (18 March 2016); https://doi.org/10.1117/12.2218443

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