Patterning and imaging with electrons: assessing multi-beam SEM for e-beam structured CMOS samples

Tomasz Garbowski; Friedhelm Panteleit; Gregor Dellemann; Manuela Gutsch; Christoph Hohle; Elke Reich; Matthias Rudolph; Katja Steidel; Xaver Thrun; Dirk Zeidler

doi:10.1117/12.2225501

8 March 2016 Patterning and imaging with electrons: assessing multi-beam SEM for e-beam structured CMOS samples

Tomasz Garbowski, Friedhelm Panteleit, Gregor Dellemann, Manuela Gutsch, Christoph Hohle, Elke Reich, Matthias Rudolph, Katja Steidel, Xaver Thrun, Dirk Zeidler

Author Affiliations +

Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 97781V (2016) https://doi.org/10.1117/12.2225501
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Electron optics can assist in the fabrication of semiconductor devices in many challenges that arise from the ongoing decrease of structure size. Examples are augmenting optical lithography by electron beam direct write strategies and high-throughput imaging of patterned structures with multiple beam electron microscopes. We use multiple beam electron microscopy to image semiconductor wafers processed by electron beam lithography.

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Tomasz Garbowski, Friedhelm Panteleit, Gregor Dellemann, Manuela Gutsch, Christoph Hohle, Elke Reich, Matthias Rudolph, Katja Steidel, Xaver Thrun, and Dirk Zeidler "Patterning and imaging with electrons: assessing multi-beam SEM for e-beam structured CMOS samples", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97781V (8 March 2016); https://doi.org/10.1117/12.2225501

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