Paper
18 March 2016 Comparison of left and right side line edge roughness in lithography
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Abstract
The left side and right side line edge roughnesses (LER) of a line are compared for different conditions, such as through pitch, through critical dimension (CD), from horizontal to vertical line direction, from litho to etch. The investigation shows that the left and right side LER from lithography process are the same, however, the metrology can cause a 4-25% increase in the measured right side LER. The LER difference is related to the CDSEM e-beam scan direction.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Sun, Nicole Saulnier, Genevieve Beique, Erik Verduijn, Wenhui Wang, Yongan Xu, Hao Tang, Yulu Chen, Ryoung-han Kim, John Arnold, Nelson Felix, and Matthew Colburn "Comparison of left and right side line edge roughness in lithography", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977822 (18 March 2016); https://doi.org/10.1117/12.2219665
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Cited by 6 scholarly publications.
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KEYWORDS
Line edge roughness

Etching

Metrology

Critical dimension metrology

Photomasks

Lithography

Extreme ultraviolet lithography

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