Diffraction based optical metrology has been established as the leading methodology for integrated as well as standalone optical metrology for overlay, focus and CD monitoring and control in state of the art chip manufacturing. We are presenting the new approaches to diffraction based optical metrology designed to meet the ≤10nm node challenges. These approaches have been implemented in the latest addition to the YieldStar metrology platform, the YS350E introducing a new way of acquiring and processing diffraction based metrology signals. In this paper we will present the new detection principle and its impact on key performance characteristics of overlay and focus measurements. We will also describe the wide range of applications of a newly introduced increased measurement spot size, enabling significant improvements to accuracy and process robustness of overlay and focus measurements. With the YS350E the optical CD measurement capability is also extended, to 10x10μm2 targets. We will discuss the performance and value of small targets in after-develop and after-etch applications. |
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CITATIONS
Cited by 1 scholarly publication and 2 patents.
Metrology
Overlay metrology
Semiconducting wafers
Diffraction
Optical metrology
Critical dimension metrology
Lithography