Comparative study of line roughness metrics of chemically amplified and inorganic resists for EUV

Roberto Fallica; Elizabeth Buitrago; Yasin Ekinci

doi:10.1117/12.2217766

25 March 2016 Comparative study of line roughness metrics of chemically amplified and inorganic resists for EUV

Roberto Fallica, Elizabeth Buitrago, Yasin Ekinci

Proceedings Volume 9779, Advances in Patterning Materials and Processes XXXIII; 97790K (2016) https://doi.org/10.1117/12.2217766
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

We present a comprehensive study of the roughness metrics of different resists. Dense line/space (L/S) images of polymethyl methacrylate (PMMA), hydrogen silsesquioxane (HSQ), different chemically amplified resists (CARs), and metal oxide based resists have been patterned by extreme ultraviolet interference lithography (EUV-IL). The three line width roughness metrics: r.m.s. value σ_LWR, correlation length ξ and roughness exponent α, were measured by metrological analysis of top down SEM images and compared for the different resists imaged here. It was found, that all metrics are required to fully describe the roughness of each resist. Our measurements indicate that few of the state-of-the- art resists tested here can meet the International Technology Roadmap for Semiconductors (ITRS) requirements for σ_LWR. The correlation length ξ has been found to be considerably higher in polymer-based materials in comparison to non-polymers. The roughness exponent α, interpreted using the concept of fractal geometry, is mainly affected by acid diffusion in CARs where it produces line edges with a higher complexity than in non-CAR resists. These results indicate that different resists platforms show very different LWR resist metrics and roughness is not only manifested in the σ_LWR but in all parameters. Therefore, all roughness metrics should be taken into account in the performance comparison of the resist, since they can have a substantial impact on the device performance.

Citation Download Citation

Roberto Fallica, Elizabeth Buitrago, and Yasin Ekinci "Comparative study of line roughness metrics of chemically amplified and inorganic resists for EUV", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 97790K (25 March 2016); https://doi.org/10.1117/12.2217766

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available