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15 March 2016 CDU budget breakdown as a diagnostic method for imaging sensitivity in HVM
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As leading edge lithography moves to advanced nodes, CDU requirements have relatively increased with technologies 14nm/20nm and beyond. In this paper, we want to introduce the methodology to offer an itemized CDU budget such as Intra-field, Inter-field, wafer to wafer as well as scanner contributors vs. non-scanner contributors (including detailed analysis of reticle contributors like CD, absorber thickness and SWA variation) through Top-Down CDU and Bottom-Up CDU budget breakdown and deliver sources of CD variation with measureable value so that we can estimate CDU gain from them. The test vehicle being used in this experiment is designed based on 14nm D/R basis. Measurement structures are densely located in the slit/scan direction on the reticle for the data collection plan. Hence, we can expand on this methodology to build up the tool reference fingerprint when we release new tool fleet. The final goal will be to establish a methodology for CDU budget breakdown that can be used to draw a conclusion on the root causes of the observed CDU, propose its improvement strategy and estimate the gain.
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Young Ki Kim, Pavan Samudrala, Juan-Manuel Gomez, Peter Nikolsky, Roy Anunciado, Maria Barkelid, Shawn Lee, Ye Tian, and Justin K. Hanson "CDU budget breakdown as a diagnostic method for imaging sensitivity in HVM", Proc. SPIE 9780, Optical Microlithography XXIX, 97801Q (15 March 2016);

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