Paper
16 March 2016 Integrated routing and fill for self-aligned double patterning (SADP) using grid-based design
Youngsoo Song, Jeemyung Lee, Seongmin Lee, Youngsoo Shin
Author Affiliations +
Abstract
Self-aligned double patterning (SADP) has been proposed as an alternative patterning solution for sub-10nm technology because of delay of advanced lithography beyond 193nm ArF. In conventional SADP, line and space style of dummy metal fills are inserted once main design is complete. A large buffer distance is required around the main design because no further verification of main design (in presence of fills) is performed. This causes irregular pattern density, which becomes a source of process variations. We propose integrated-fill, in which main design and dummy fill insertion are performed together. This requires a change in overall design flow, which we discuss. Integrated-fill is demonstrated in M2 layer of SADP process; M2 density increases by 15.7% with 2.3% reduction in standard deviation of density distribution; metal thickness variation is also reduced by 24%. More dummy fills cause increased coupling capacitance, which however is shown to be insignificant.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Youngsoo Song, Jeemyung Lee, Seongmin Lee, and Youngsoo Shin "Integrated routing and fill for self-aligned double patterning (SADP) using grid-based design", Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 978105 (16 March 2016); https://doi.org/10.1117/12.2219142
Lens.org Logo
CITATIONS
Cited by 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Metals

Capacitance

Photomasks

Double patterning technology

Lithography

Optical lithography

193nm lithography

Back to Top