Graphene nanoribbon field effect transistor for nanometer-size on-chip temperature sensor

Yaser M. Banadaki; Ashok Srivastava; Safura Sharifi

doi:10.1117/12.2219346

16 April 2016 Graphene nanoribbon field effect transistor for nanometer-size on-chip temperature sensor

Yaser M. Banadaki, Ashok Srivastava, Safura Sharifi

Proceedings Volume 9802, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2016; 980203 (2016) https://doi.org/10.1117/12.2219346
Event: SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2016, Las Vegas, Nevada, United States

Abstract

Graphene has been extensively investigated as a promising material for various types of high performance sensors due to its large surface-to-volume ratio, remarkably high carrier mobility, high carrier density, high thermal conductivity, extremely high mechanical strength and high signal-to-noise ratio. The power density and the corresponding die temperature can be tremendously high in scaled emerging technology designs, urging the on-chip sensing and controlling of the generated heat in nanometer dimensions. In this paper, we have explored the feasibility of a thin oxide graphene nanoribbon (GNR) as nanometer-size temperature sensor for detecting local on-chip temperature at scaled bias voltages of emerging technology. We have introduced an analytical model for GNR FET for 22nm technology node, which incorporates both thermionic emission of high-energy carriers and band-to-band-tunneling (BTBT) of carriers from drain to channel regions together with different scattering mechanisms due to intrinsic acoustic phonons and optical phonons and line-edge roughness in narrow GNRs. The temperature coefficient of resistivity (TCR) of GNR FET-based temperature sensor shows approximately an order of magnitude higher TCR than large-area graphene FET temperature sensor by accurately choosing of GNR width and bias condition for a temperature set point. At gate bias V_GS = 0.55 V, TCR maximizes at room temperature to 2.1×10⁻² /K, which is also independent of GNR width, allowing the design of width-free GNR FET for room temperature sensing applications.

Conference Presentation

Citation Download Citation

Yaser M. Banadaki, Ashok Srivastava, and Safura Sharifi "Graphene nanoribbon field effect transistor for nanometer-size on-chip temperature sensor", Proc. SPIE 9802, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2016, 980203 (16 April 2016); https://doi.org/10.1117/12.2219346

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available