Extending black silicon imaging to backside illumination

M. U. Pralle; C. Vineis; C. Palsule; J. Jiang; J. E. Carey

doi:10.1117/12.2223063

20 May 2016 Extending black silicon imaging to backside illumination

M. U. Pralle, C. Vineis, C. Palsule, J. Jiang, J. E. Carey

Proceedings Volume 9819, Infrared Technology and Applications XLII; 981904 (2016) https://doi.org/10.1117/12.2223063
Event: SPIE Defense + Security, 2016, Baltimore, MD, United States

Abstract

SiOnyx has extended the spectral sensitivity of a high performance low cost CMOS image sensor to cover the spectral band from 400nm to 1200nm. The enhanced quantum efficiency is combined with a CMOS sensor design that demonstrates state of the art read noise characteristics and low fixed pattern noise. The resultant sensor exhibits high signal to noise ratio throughout all lighting conditions from noon day sun to moonless clear starlight. In outdoor nighttime conditions, the extended quantum efficiency at wavelengths beyond 1000nm enables the silicon sensor to image “nightglow” illumination. This spectral range has historically only been accessible using non-silicon based SWIR sensors. This enables a true digital nightvision sensor with demonstrated imaging performance at 60 FPS at light levels below 1 mLux. The quantum efficiency enhancement is achieved by utilizing SiOnyx’s proprietary ultrafast laser semiconductor processing technology that enhances the absorption of light within a thin pixel layer. Recent progress in device architecture has enabled a further step change in near infrared quantum efficiency performance leading to improved nightglow imaging. SiOnyx has integrated this sensor into various camera systems for surveillance, nightvision and 1064nm laser see-spot.

Citation Download Citation

M. U. Pralle, C. Vineis, C. Palsule, J. Jiang, and J. E. Carey "Extending black silicon imaging to backside illumination", Proc. SPIE 9819, Infrared Technology and Applications XLII, 981904 (20 May 2016); https://doi.org/10.1117/12.2223063

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