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26 May 2016 Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation
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In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.
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Byoung-Soo Choi, Sung-Hyun Jo, Myunghan Bae, Sang-Hwan Kim, and Jang-Kyoo Shin "Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation", Proc. SPIE 9854, Image Sensing Technologies: Materials, Devices, Systems, and Applications III, 98540Z (26 May 2016);

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