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27 April 2016 Large area patterning using interference and nanoimprint lithography
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Interference lithography (IL) is the best suited technology for the origination of large area master structures with high resolution. In prior works, we seamlessly pattern areas of up to 1.2 x 1.2 m2 with periodic features, i.e. a diffraction grating with a period in the micron range. For this process we use an argon ion laser emitting at 363.8 nm. Thus, feasible periods are in the range of 100 μm to 200 nm. Edge-defined techniques or also called (self-aligned) double patterning processes can be used to double the spatial frequency of such structures. This way, we aim to reduce achievable periods further down to 100 nm. In order to replicate master structures, we make use of nanoimprint lithography (NIL) processes. In this work, we present results using IL as mastering and NIL as replication technology in the fields of photovoltaics as well as display and lighting applications. In photovoltaics different concepts like the micron-scale patterning of the front side as well as the realization of rear side diffraction gratings are presented. The benefit for each is shown on final device level. In the context of display and lighting applications, we realized various structures ranging from designed, symmetric or asymmetric, diffusers, antireflective and/or antiglare structures, polarization optical elements (wire grid polarizers), light guidance and light outcoupling structures.
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B. Bläsi, N. Tucher, O. Höhn, V. Kübler, T. Kroyer, Ch. Wellens, and H. Hauser "Large area patterning using interference and nanoimprint lithography", Proc. SPIE 9888, Micro-Optics 2016, 98880H (27 April 2016);

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