Heterogeneous integration of SiGe/Ge and III-V for Si photonics

Mitsuru Takenaka; Younghyun Kim; Jaehoon Han; Jian Kang; Yuki Ikku; Yongpeng Cheng; Jinkwon Park; Shinichi Takagi

doi:10.1117/12.2227457

13 May 2016 Heterogeneous integration of SiGe/Ge and III-V for Si photonics

Mitsuru Takenaka, Younghyun Kim, Jaehoon Han, Jian Kang, Yuki Ikku, Yongpeng Cheng, Jinkwon Park, Shinichi Takagi

Proceedings Volume 9891, Silicon Photonics and Photonic Integrated Circuits V; 98911H (2016) https://doi.org/10.1117/12.2227457
Event: SPIE Photonics Europe, 2016, Brussels, Belgium

Abstract

The heterogeneous integration of SiGe/Ge and III-V semiconductors gives us an opportunity to enhance functionalities of Si photonics platform through their superior material properties which lack in Si. In this paper we discuss what SiGe/Ge and III-V can bring to Si photonics. We have predicted that the light effective hole mass in strained SiGe results in the enhanced the free-carrier effects such as the plasma dispersion effect and free-carrier absorption. We observed significantly larger free-carrier absorption in the SiGe optical modulator than in the control Si device. By fabricating asymmetric Mach-Zehnder interferometer (MZI) SiGe optical modulators, the enhancement of the plasma dispersion effect in strained SiGe has been successfully demonstrated. Mid-infrared integrated photonics based on Ge waveguides on Si have also been investigated. Since Ge is transparent to the entire mid-infrared range, Ge photonic integrated circuits on the Ge-on-Insulator (GeOI) wafer are quite attractive. We have successfully fabricated the GeOI wafer with 2-μm-thick buried oxide (BOX) layer by wafer bonding. The passive waveguide components based on Ge strip waveguides have been demonstrated on the GeOI. We have also demonstrated carrier-injection Ge variable optical attenuators. We have proposed and investigate the III-V CMOS photonics platform by using the III-V on Insulator (IIIV- OI) on a Si wafer. The strong optical confinement in the III-V-OI enables us to achieve high-performance photonic devices. We have successfully demonstrated InGaAsP MZI optical switch with the low on-state crosstalk on the III-V-OI. Ultra-low dark current waveguide InGaAs PDs integrated with an InP grating coupler are also achieved.

Citation Download Citation

Mitsuru Takenaka, Younghyun Kim, Jaehoon Han, Jian Kang, Yuki Ikku, Yongpeng Cheng, Jinkwon Park, and Shinichi Takagi "Heterogeneous integration of SiGe/Ge and III-V for Si photonics", Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98911H (13 May 2016); https://doi.org/10.1117/12.2227457

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